5 citations · 6 across the 4 of their papers we have counts for
4 papers
On the issue of ohmicity of Schottky contacts
A. V. Sachenko, A. E. Belyaev, R. V. Konakova
An analysis is made of the conditions for ohmic contacts realization in the case of Schottky contacts. Based on the classical notions about the mechanisms of current flow, we consi…
Energy renormalization and Mott transition in n-GaAs and n-GaN
P. N. Romanets, A. V. Sachenko
In this paper, we investigate renormalization of charge carrier effective masses and bandgap narrowing in n-GaAs and wurtzite-type n-GaN over a wide range of temperatures and dopan…
The features of contact resistivity behavior at helium temperatures for InP- and GaAs-based ohmic contacts
A. V. Sachenko, A. E. Belyaev, N. S. Boltovets +4
Contact resistivity rc of InP and GaAs based ohmic contacts was measured in the 4.2/300 K temperature range. Nonmonotonic dependences rc(T), with a minimum at temperature 50 K (150…
Temperature dependence of contact resistance of Au-Ti-Pd2Si-n+-Si ohmic contacts
A. E. Belyaev, N. S. Boltovets, R. V. Konakova +3
We investigated temperature dependence of contact resistance of an Au-Ti-Pd2Si ohmic contact to heavily doped n+-Si. The contact resistance increases with temperature owing to cond…