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13 papers · 2 filters
High open-circuit voltage in transition metal dichalcogenide solar cells
Simon A. Svatek, C. Bueno, Der-Yuh Lin +9
The conversion efficiency of ultra-thin solar cells based on layered materials has been limited by their open-circuit voltage, which is typically pinned to a value under 0.6 V. Her…
Atomically Thin Boron Nitride as an Ideal Spacer for Metal-Enhanced Fluorescence
Wei Gan, Christos Tserkezis, Qiran Cai +11
The metal-enhanced fluorescence (MEF) considerably enhances the luminescence for various applications, but its performance largely depends on the dielectric spacer between the fluo…
Two-dimensional van der Waals Heterostructures for Synergistically Improved Surface Enhanced Raman Spectroscopy
Qiran Cai, Wei Gan, Alexey Falin +8
Surface enhanced Raman spectroscopy (SERS) is a precise and non-invasive analytical technique that is widely used in chemical analysis, environmental protection, food processing, p…
Integration of multi-layer black phosphorus into photoconductive antennas for THz emission
M. H. Doha, J. I. Santos Batista, A. F. Rawwagah +6
We report the fabrication, characterization, and modeling of photoconductive antennas using 40 nm thin-film flakes of black phosphorus (BP) as the photoconductor and hexagonal boro…
High-responsivity graphene photodetectors integrated on silicon microring resonators
Simone Schuler, Jakob E. Muench, Alfonso Ruocco +9
Graphene integrated photonics provides several advantages over conventional Si photonics. Single layer graphene (SLG) enables fast, broadband, and energy-efficient electro-optic mo…
Thermoelectric graphene photodetectors with sub-nanosecond response times at Terahertz frequencies
Leonardo Viti, Alisson R. Cadore, Xinxin Yang +7
Ultrafast and sensitive (noise equivalent power <1 nWHz-1/2) light-detection in the Terahertz (THz) frequency range (0.1-10 THz) and at room-temperature is key for applications suc…
Full energy spectra of interface state densities for n- and p-type MoS2 field-effect transistors
N. Fang, S. Toyoda, T. Taniguchi +2
Two-dimensional (2D) layered materials are promising for replacing Si to overcome the scaling limit of recent ~5 nm-length metal-oxide-semiconductor field-effect transistors (MOSFE…
Gate-tunable non-volatile photomemory effect in MoS transistors
Andreij C. Gadelha, Alisson R. Cadore, Kenji Watanabe +5
Non-volatile memory devices have been limited to flash architectures that are complex devices. Here, we present a unique photomemory effect in MoS transistors. The photomemory…
Tunable Photodetectors via in situ Thermal Conversion of TiS to TiO
Foad Ghasemi, Riccardo Frisenda, Eduardo Flores +11
In two-dimensional materials research, oxidation is usually considered as a common source for the degradation of electronic and optoelectronic devices or even device failure. Howev…
A liquid nitrogen cooled superconducting transition edge sensor with ultra-high responsivity and GHz operation speeds
Paul Seifert, Jose Ramon Duran Retamal, Rafael Luque Merino +9
Photodetectors based on nano-structured superconducting thin films are currently some of the most sensitive quantum sensors and are key enabling technologies in such broad areas as…
Facile deterministic cutting of 2D materials for twistronics using a tapered fibre scalpel
L. D. Varma Sangani, R. S. Surya Kanthi, Pratap Chandra Adak +5
We present a quick and reliable method to cut 2D materials for creating 2D twisted heterostructures and devices. We demonstrate the effectiveness of using a tapered fibre scalped f…
Probing the Electronic Properties of Monolayer MoS via Interaction with Molecular Hydrogen
Natália P. Rezende, Alisson R. Cadore, Andreij C. Gadelha +8
This work presents a detailed experimental investigation of the interaction between molecular hydrogen (H) and monolayer MoS field effect transistors (MoS FET), aiming…
Thickness-Controlled Black Phosphorus Tunnel Field-Effect Transistor for Low Power Switches
Seungho Kim, Gyuho Myeong, Wongil Shin +7
The continuous down-scaling of transistors has been the key to the successful development of current information technology. However, with Moore's law reaching its limits, the deve…