most citedEpitaxial growth of topological insulator Bi2Se3 film on Si(111) with atomically sharp interface

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cond-mat.mtrl-sci2011★ 217 cited

Epitaxial growth of topological insulator Bi2Se3 film on Si(111) with atomically sharp interface

Namrata Bansal, Yong Seung Kim, Eliav Edrey +10

Atomically sharp epitaxial growth of Bi2Se3 films is achieved on Si (111) substrate with MBE (Molecular Beam Epitaxy). Two-step growth process is found to be a key to achieve inter…