23 citations · 98 across the 8 of their papers we have counts for
8 papers
Stability of multielectron bubbles in high Landau levels
Dohyung Ro, S. A. Myers, N. Deng +5
We study multielectron bubble phases in the and Landau levels in a high mobility GaAs/AlGaAs sample. We found that the longitudinal magnetoresistance versus temperature…
Disorder broadening of even denominator fractional quantum Hall states in the presence of a short-range alloy potential
E. Kleinbaum, Hongxi Li, N. Deng +3
We study energy gaps of the and fractional quantum Hall states in a series of two-dimensional electron gases containing alloy disorder. We found that gaps at these…
Electron Bubbles and the Structure of the Orbital Wavefunction
Dohyung Ro, N. Deng, J. D. Watson +4
Stripe-like and bubble-like patterns spontaneously form in numerous physical, chemical, and biological systems when competing long-range and short-range interactions banish uniform…
Onset of Quantum Criticality in the Topological-to-Nematic Transition in a Two-dimensional Electron Gas at Filling Factor
K. A. Schreiber, N. Samkharadze, G. C. Gardner +3
Under hydrostatic pressure, the ground state of a two-dimensional electron gas at changes from a fractional quantum Hall state to the stripe phase. By measuring the energy…
Theory of topological excitations and metal-insulator transition in reentrant integer quantum Hall effect
G. E. Simion, T-G. Lin, J. D. Watson +4
The reentrant integer quantum Hall effects (RIQHE) are due to formation of electronic crystals. We show analytically and numerically that topological textures in the charge density…
Impact of Heterostructure Design on Transport Properties in the Second Landau Level of in-situ Back-Gated Two-Dimensional Electron Gases
J. D. Watson, G. A. Csáthy, M. J. Manfra
We report on transport in the second Landau level in \emph{in-situ} back-gated two-dimensional electron gases in GaAs/AlGaAs quantum wells. Minimization of gate leakage…
Growth and electrical characterization of Al0.24Ga0.76As/AlxGa1-xAs/Al0.24Ga0.76As modulation-doped quantum wells with extremely low x
Geoffrey C. Gardner, John D. Watson, Sumit Mondal +3
We report on the growth and electrical characterization of modulation-doped Al0.24Ga0.76As/AlxGa1-xAs/Al0.24Ga0.76As quantum wells with mole fractions as low as x=0.00057. Such str…
Scattering Mechanisms in a High Mobility Low Density Carbon-Doped (100) GaAs Two-Dimensional Hole System
J. D. Watson, S. Mondal, G. A. Csáthy +5
We report on a systematic study of the density dependence of mobility in a low-density Carbon-doped (100) GaAs two-dimensional hole system (2DHS). At T= 50 mK, a mobility of 2.6 x…