776 citations · 4k across the 57 of their papers we have counts for
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High electron density modulation doping using ultra-thin (1 nm) spacer layer
Nidhin Kurian Kalarickal, Zhanbo Xia, Joe Mcglone +5
We report on the design and demonstration of modulation doped heterostructures to achieve high sheet charge density. The use of a thin spacer…
Lateral Heterojunction BaTiO3/AlGaN Diodes with >8MV/cm Breakdown Field
Towhidur Razzak, Hareesh Chandrasekar, Kamal Hussain +11
In this paper, we report enhanced breakdown characteristics of Pt/BaTiO3/Al0.58Ga0.42N lateral heterojunction diodes compared to Pt/Al0.58Ga0.42N Schottky diodes. BaTiO3, an extrem…
Mechanism of Si doping in Plasma Assisted MBE Growth of \b{eta}-Ga2O3
Nidhin Kurian Kalarickal, Zhanbo Xia, Joe McGlone +6
We report on the origin of high Si flux observed during the use of Si as a doping source in plasma assisted MBE growth of \b{eta}-Ga2O3. We show on the basis of secondary ion mass…
Compositionally graded contact layers for MOCVD grown high Al-content AlGaN transistors
Towhidur Razzak, Seongmo Hwang, Antwon Coleman +7
In this letter, we design and demonstrate an improved MOCVD grown reverse Al-composition graded contact layer to achieve low resistance contact to MOCVD grown ultra-wide bandgap (U…