979 citations · 1.7k across the 7 of their papers we have counts for
7 papers
Loss of anisotropy in strained ultrathin epitaxial L10 Mn-Ga films
Albrecht Köhler, Ivan Knez, Daniel Ebke +2
In this work we are investigating the effect of strain in ultrathin Mn-Ga thin films on the magnetic properties at room temperature. Two different Mn-Ga compositions of which one i…
Observation of Quantum Spin Hall States in InAs/GaSb Bilayers under Broken Time-Reversal Symmetry
Lingjie Du, Ivan Knez, Gerard Sullivan +1
Topological insulators (TIs) are a novel class of materials with nontrivial surface or edge states. Time-reversal symmetry (TRS) protected TIs are characterized by the Z2 topologic…
Enhancement of the Fractional Quantum Hall State in a Small In-Plane Magnetic Field
Guangtong Liu, Chi Zhang, D. C. Tsui +5
Using a 50-nm width, ultra-clean GaAs/AlGaAs quantum well, we have studied the Landau level filling factor fractional quantum Hall effect in a perpendicular magnetic field…
Perfect Andreev Reflection of Helical Edge Modes in InAs/GaSb Quantum Wells
Ivan Knez, Rui-Rui Du, Gerard Sullivan
We present an experimental study of inverted InAs/GaSb composite quantum wells in the hybridization regime and contacted by superconducting electrodes. A front gate is used to vary…
Anisotropy of zero-resistance states in InN films under an in-plane magnetic filed
Xiaowei He, Yanhua Dai, Ivan Knez +3
We report low temperature current-voltage measurements on n-type InN films grown by molecular beam epitaxy. The zero-resistance state with a large critical current around 1 mA has…
Evidence for Helical Edge Modes in Inverted InAs/GaSb Quantum Wells
Ivan Knez, Rui-Rui Du, Gerard Sullivan
We present an experimental study of low temperature electronic transport in the hybridization gap of inverted InAs/GaSb composite quantum wells. Electrostatic gate is used to push…
Finite Conductivity in Mesoscopic Hall Bars of Inverted InAs/GaSb Quantum Wells
Ivan Knez, R. R. Du, Gerard Sullivan
We have studied experimentally the low temperature conductivity of mesoscopic size InAs/GaSb quantum well Hall bar devices in the inverted regime. Using a pair of electrostatic gat…