385 citations · 507 across the 4 of their papers we have counts for
Showing cond-mat.mtrl-sciShow all
2 papers · 1 filter
cond-mat.mtrl-sci2011★ 94 cited
High-Transconductance Graphene Solution-Gated Field Effect Transistors
Lucas H. Hess, Moritz V. Hauf, Max Seifert +5
In this work, we report on the electronic properties of solution-gated field effect transistors (SGFETs) fabricated using large-area graphene. Devices prepared both with epitaxiall…
cond-mat.mtrl-sci2010★ 385 cited
Chemical control of the charge state of nitrogen-vacancy centers in diamond
M. V. Hauf, B. Grotz, B. Naydenov +8
We investigate the effect of surface termination on the charge state of nitrogen vacancy centers, which have been ion-implanted few nanometers below the surface of diamond. We find…