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Spectroscopy of multi-electrode tunnel barriers
A. Shirkhorshidian, John King Gamble, L. Maurer +8
Despite their ubiquity in nanoscale electronic devices, the physics of tunnel barriers has not been developed to the extent necessary for the engineering of devices in the few-elec…
High-fidelity single-shot readout for a spin qubit via an enhanced latching mechanism
Patrick Harvey-Collard, Benjamin D'Anjou, Martin Rudolph +9
The readout of semiconductor spin qubits based on spin blockade is fast but suffers from a small charge signal. Previous work suggested large benefits from additional charge mappin…
Fabrication of quantum dots in undoped Si/SiGe heterostructures using a single metal-gate layer
T. M. Lu, J. K. Gamble, R. P. Muller +9
Enhancement-mode Si/SiGe electron quantum dots have been pursued extensively by many groups for \revEdit{their} potential in quantum computing. Most of the reported dot designs uti…
Coherent coupling between a quantum dot and a donor in silicon
Patrick Harvey-Collard, N. Tobias Jacobson, Martin Rudolph +8
Individual donors in silicon chips are used as quantum bits with extremely low error rates. However, physical realizations have been limited to one donor because their atomic size…
Transport spectroscopy of low disorder silicon tunnel barriers with and without Sb implants
A. Shirkhorshidian, N. C. Bishop, J. Dominguez +4
We present transport measurements of silicon MOS split gate structures with and without Sb implants. We observe classical point contact (PC) behavior that is free of any pronounced…
Probing limits of STM field emission patterned Si:P -doped devices
M. Rudolph, S. M. Carr, G. Subramania +6
Recently, a single atom transistor was deterministically fabricated using phosphorus in Si by H-desorption lithography with a scanning tunneling microscope (STM). This milestone in…
Enhancement-mode buried strained silicon channel quantum dot with tunable lateral geometry
T. M. Lu, N. C. Bishop, T. Pluym +7
We propose and demonstrate a relaxed-SiGe/strained-Si (SiGe/s-Si) enhancement-mode gate stack for quantum dots. The enhancement-mode SiGe/s-Si structure is pursued because it space…