507 citations · 919 across the 15 of their papers we have counts for
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Highly Quantum-Confined InAs Nanoscale Membranes
Kuniharu Takei, Hui Fang, Bala Kumar +10
Nanoscale size-effects drastically alter the fundamental properties of semiconductors. Here, we investigate the dominant role of quantum confinement in the field-effect device prop…
High magnetoresistance at room temperature in p-i-n graphene nanoribbons due to band-to-band tunneling effects
Gengchiau Liang, S. Bala kumar, M. B. A. Jalil +1
A large magnetoresistance effect is obtained at room-temperature by using p-i-n armchair-graphene-nanoribbon (GNR) heterostructures. The key advantage is the virtual elimination of…
Multilayer graphene nanoribbon under vertical electric field
S. Bala kumar, Jing Guo
We study the effect of vertical electric-field (E-field) on the electronic properties of the multilayer armchair graphene nanoribbon (aGNR). Under E-field, the band structure of a…
Performance Limits of Monolayer Transition Metal Dichalcogenide Transistors
Leitao Liu, S. Bala Kumar, Yijian Ouyang +1
The performance limits of monolayer transition metal dichalcogenide transistors are examined with a ballistic MOSFET model. Using ab-initio theory, we calculate the band structures…
Transversal electric field effect in multilayer graphene nanoribbon
S. Bala kumar, Jing Guoa
We study the effect of transversal electric-field (E-field) on the electronic properties of multilayer armchair-graphene-nanoribbon (AGNR). The bandgap in multilayer-AGNRs can be r…
Multilayer graphene under vertical electric field
S. Bala kumar, Jing Guo
We study the effect of vertical electric field (E-field) on the electronic properties of multilayer graphene. We show that the effective mass, electron velocity and density-of-stat…