Transversal electric field effect in multilayer graphene nanoribbon

Abstract

We study the effect of transversal electric-field (E-field) on the electronic properties of multilayer armchair-graphene-nanoribbon (AGNR). The bandgap in multilayer-AGNRs can be reversibly modulated with the application of E-field. At optimized widths, we obtain a semiconductor (SC) to metallic (M), as well as M-SC transition. The AGNR electronic bands undergo vivid transformations due to the E-field, leading to phenomena such as increase in electron velocity, change in the sign of the electron effective mass, and the formation of linear dispersion with massless Dirac fermions similar to 2D-graphene. These effects are very useful and can be utilized for device applications.

8pages, 3 fig

References in corpus (8)

• The electronic properties of graphene
• Energy Gaps in Graphene Nanoribbons
• Electronic States of Graphene Nanoribbons
• Electronic states and Landau levels in graphene stacks
• Electronic properties of bilayer and multilayer graphene
• Armchair graphene nanoribbons: Electronic structure and electric field modulation
• Transverse field effect in graphene ribbons
• Berry phase mediated topological thermoelectric transport in gapped single and bilayer graphene