13 citations · 61 across the 19 of their papers we have counts for
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On the nature of large-scale defect accumulations in Czochralski-grown silicon
V. P. Kalinushkin, A. N. Buzynin, V. A. Yuryev +2
Czochralski-grown boron-doped silicon crystals were studied by the techniques of the low-angle mid-IR-light scattering and electron-beam-induced current. The large-scale accumulati…
Possibilities of application of elastic mid-IR light scattering for inspection of internal gettering operations
O. V. Astafiev, A. N. Buzynin, V. P. Kalinushkin +2
A method of low-angle mid-IR light scattering is shown to be applicable for the contactless and non-destructive inspection of the internal gettering process in CZ Si crystals. A cl…
Scanning mid-IR-laser microscopy: an efficient tool for materials studies in silicon-based photonics and photovoltaics
O. V. Astafiev, V. P. Kalinushkin, V. A. Yuryev
A method of scanning mid-IR-laser microscopy has recently been proposed for the investigation of large-scale electrically and recombination-active defects in semiconductors and non…
Application of scanning mid-IR-laser microscopy for characterization of semiconductor materials for photovoltaics
V. P. Kalinushkin, O. V. Astafiev, V. A. Yuryev
The scanning mid-IR-laser microscopy was previously demonstrated as an effective tool for characterization of different semiconductor crystals. Now the technique has been successfu…
Elastic Mid-Infrared Light Scattering: a Basis for Microscopy of Large-Scale Electrically Active Defects in Semiconducting Materials
V. P. Kalinushkin, V. A. Yuryev, O. V. Astafiev
A method of the mid-IR-laser microscopy has been proposed for the investigation of the large-scale electrically and recombination active defects in semiconductors and non-destructi…