4 papers
Large-scale defect accumulations in Czochralski-grown silicon
V. P. Kalinushkin, A. N. Buzynin, V. A. Yuryev +1
Czochralski-grown silicon crystals were studied by the techniques of the low-angle mid-IR-light scattering and electron-beam-induced current. The large-scale accumulations of elect…
Application of elastic mid-IR light scattering for inspection of internal gettering operations
O. V. Astafiev, A. N. Buzynin, V. P. Kalinushkin +1
Recently, the internal gettering process has become one of the main operations for manufacturing of semiconductor devices of CZ Si. However, methods for the direct inspection of th…
On the nature of large-scale defect accumulations in Czochralski-grown silicon
V. P. Kalinushkin, A. N. Buzynin, V. A. Yuryev +2
Czochralski-grown boron-doped silicon crystals were studied by the techniques of the low-angle mid-IR-light scattering and electron-beam-induced current. The large-scale accumulati…
Possibilities of application of elastic mid-IR light scattering for inspection of internal gettering operations
O. V. Astafiev, A. N. Buzynin, V. P. Kalinushkin +2
A method of low-angle mid-IR light scattering is shown to be applicable for the contactless and non-destructive inspection of the internal gettering process in CZ Si crystals. A cl…