63 citations · 529 across the 29 of their papers we have counts for
25 papers · 1 filter
Structural and Optical Characteristics of Implanted with Rare Earth Ions
Renata Ratajczak, Joanna Matulewicz, Slawomir Prucnal +10
We investigated the structural evolution and optical properties of crystals implanted with different rare-earth (RE) ions using channeling Rutherford Backscattering Spe…
Structural changes in Ge1-xSnx and Si1-x-yGeySnx thin films on SOI substrates treated by pulse laser annealing
Oliver Steuer, Daniel Schwarz, Michael Oehme +10
Ge1-xSnx and Si1-x-yGeySnx alloys are promising materials for future opto- and nanoelectronics applications. These alloys enable effective band-gap engineering, broad adjustability…
Si1-x-yGeySnx alloy formation by Sn ion implantation and flash lamp annealing
Oliver Steuer, Michail Michailow, René Hübner +12
For many years, Si1-yGey alloys have been applied in the semiconductor industry due to the ability to adjust the performance of Si-based nanoelectronic devices. Following this allo…
Intrinsic magnetic properties of the layered antiferromagnet CrSBr
Fangchao Long, Kseniia Mosina, René Hübner +6
Van der Waals magnetic materials are an ideal platform to study low-dimensional magnetism. Opposed to other members of this family, the magnetic semiconductor CrSBr is highly resis…
Strong Exciton-Phonon Coupling as a Fingerprint of Magnetic Ordering in van der Waals Layered CrSBr
Kaiman Lin, Xiaoxiao Sun, Florian Dirnberger +10
The layered, air-stable van der Waals antiferromagnetic compound CrSBr exhibits pronounced coupling between its optical, electronic, and magnetic properties. As an example, exciton…
Ferromagnetic interlayer coupling in CrSBr crystals irradiated by ions
Fangchao Long, Mahdi Ghorbani-Asl, Kseniia Mosina +11
Layered magnetic materials are becoming a major platform for future spin-based applications. Particularly the air-stable van der Waals compound CrSBr is attracting considerable int…
On Curie temperature of B20-MnSi films
Zichao Li, Ye Yuan, Viktor Begeza +5
B20-type MnSi is the prototype magnetic skyrmion material. Thin films of MnSi show a higher Curie temperature than their bulk counterpart. However, it is not yet clear what mechani…
Mid- and far-infrared localized surface plasmon resonances in chalcogen-hyperdoped silicon
Mao Wang, Ye Yu, Slawomir Prucnal +13
Plasmonic sensing in the infrared region employs the direct interaction of the vibrational fingerprints of molecules with the plasmonic resonances, creating surface-enhanced sensin…
Chlorine doping of MoSe2 flakes by ion implantation
Slawomir Prucnal, Arsalan Hashemi, Mahdi Ghorbani-Asl +10
The efficient integration of transition metal dichalcogenides (TMDs) into the current electronic device technology requires mastering the techniques of effective tuning of their op…
B20-MnSi films grown on Si(100) substrates with magnetic skyrmion signature
Zichao Li, Ye Yuan, René Hübner +8
Magnetic skyrmions have been suggested as information carriers for future spintronic devices. As the first material with experimentally confirmed skyrmions, B20-type MnSi was the r…
Enhanced trion emission in monolayer MoSe2 by constructing a type-I van der Waals heterostructure
Juanmei Duan, Phanish Chava, Mahdi Ghorbani-Asl +10
Trions, quasi-particles consisting of two electrons combined with one hole or of two holes with one electron, have recently been observed in transition metal dichalcogenides (TMDCs…
Dissolution of donor-vacancy clusters in heavily doped n-type germanium
Slawomir Prucnal, Maciej O. Liedke, Xiaoshuang Wang +17
The n-type doping of Ge is a self-limiting process due to the formation of vacancy-donor complexes (DnV with n <= 4) that deactivate the donors. This work unambiguously demonstrate…
Superconductivity in single-crystalline, aluminum- and gallium-hyperdoped germanium
Slawomir Prucnal, Viton Heera, René Hübner +11
Superconductivity in group IV semiconductors is desired for hybrid devices combining both semiconducting and superconducting properties. Following boron doped diamond and Si, super…
Strain and Band-Gap Engineering in Ge-Sn Alloys via P Doping
Slawomir Prucnal, Yonder Berencén, Mao Wang +19
Ge with a quasi-direct band gap can be realized by strain engineering, alloying with Sn, or ultrahigh n-type doping. In this work, we use all three approaches together to fabricate…
Epitaxial Mn5Ge3 (100) layer on Ge(100) substrates obtained by flash lamp annealing
Yufang Xie, Ye Yuan, Mao Wang +7
Mn5Ge3 thin films have been demonstrated as a promising spin-injector material for germanium-based spintronic devices. So far, Mn5Ge3 has been grown epitaxially only on Ge (111) su…
CMOS-compatible controlled hyperdoping of silicon nanowires
Yonder Berencén, Slawomir Prucnal, Wolfhard Möller +13
Hyperdoping consists of the intentional introduction of deep-level dopants into a semiconductor in excess of equilibrium concentrations. This causes a broadening of dopant energy l…
Suppressing the cellular breakdown in silicon supersaturated with titanium
Fang Liu, S Prucnal, R Hübner +4
Hyper doping Si with up to 6 at.% Ti in solid solution was performed by ion implantation followed by pulsed laser annealing and flash lamp annealing. In both cases, the implanted S…
Intrinsic diamagnetism in the Weyl semimetal TaAs
Yu Liu, Zhilin Li, Liwei Guo +6
We investigate the magnetic properties of TaAs, a prototype Weyl semimetal. TaAs crystals show weak diamagnetism with magnetic susceptibility of about -7 * 10^{-7} emu/(g*Oe) at 5…
Hyperdoping silicon with selenium: solid vs. liquid phase epitaxy
S. Zhou, F. Liu, S. Prucnal +6
Chalcogen-hyperdoped silicon shows potential applications in silicon-based infrared photodetectors and intermediate band solar cells. Due to the low solid solubility limits of chal…
Disentangling defect-induced ferromagnetism in SiC
Yutian Wang, Lin Li, Slawomir Prucnal +9
We present a detailed investigation of the magnetic properties in SiC single crystals bombarded with neon ions. Through careful measuring of the magnetization of virgin and irradia…
Structural and magnetic properties of irradiated SiC
Yutian Wang, Xuliang Chen, Lin Li +8
We present a comprehensive structural characterization of ferromagnetic SiC single crystals induced by Ne ion irradiation. The ferromagnetism has been confirmed by electron spin re…
Origin and enhancement of the 1.3 um luminescence from GaAs treated by ion-implantation and flash lamp annealing
Kun Gao, S. Prucnal, W. Skorupa +2
GaAs and GaAs based materials have outstanding optoelectronic properties and are widely used as light emitting media in devices. Many approaches have been applied to GaAs to genera…
InP nanocrystals on silicon for optoelectronic applications
Slawomir Prucnal, Shengqiang Zhou, Xin Ou +8
One of the solutions enabling performance progress, which can overcome the downsizing limit in silicon technology, is the integration of different functional optoelectronic devices…
Temperature stable 1.3 μm emission from GaAs
Slawomir Prucnal, Kun Gao, Wolfgang Anwand +3
Gallium arsenide has outstanding performance in optical communication devices for light source purposes. Different approaches have been done to realize the luminescence from GaAs m…