59 citations · 321 across the 18 of their papers we have counts for
14 papers · 1 filter
Taxonomy of defects in semi-dry transferred CVD graphene
N. Reckinger, B. Hackens
Post-transfer in-depth morphological characterization of graphene grown by chemical vapor deposition (CVD) is of great importance to evaluate the quality and to understand the orig…
Restoring self-limited growth of single-layer graphene on copper foil via backside coating
Nicolas Reckinger, Marcello Casa, Jeroen E. Scheerder +9
The growth of single-layer graphene (SLG) by chemical vapor deposition (CVD) on copper surfaces is very popular because of the self-limiting effect that prevents the growth of few-…
Oxidation-assisted graphene heteroepitaxy on copper foil
Nicolas Reckinger, Xiaohui Tang, Frédéric Joucken +6
We propose an innovative, easy-to-implement approach to synthesize large-area singlecrystalline graphene sheets by chemical vapor deposition on copper foil. This method doubly take…
Using top graphene layer as sacrificial protection during dielectric atomic layer deposition
Xiaohui Tang, Nicolas Reckinger, Olivier Poncelet +5
We investigate the structural damage of graphene underlying dielectrics (HfO2 and Al2O3) by remote plasma-enhanced atomic layer deposition (PE-ALD). Dielectric film is grown on bil…
Self-Formation of Sub-10-nm Nanogaps by Silicidation for Resistive Switch in Air
Xiaohui Tang, Laurent A. Francis, Constantin Augustin Dutu +2
We developed a simple and reliable method for the fabrication of sub-10-nm wide nanogaps. The self-formed nanogap is based on the stoichiometric solid-state reaction between metal…
The influence of residual oxidizing impurities on the synthesis of graphene by atmospheric pressure chemical vapor deposition
Nicolas Reckinger, Alexandre Felten, Cristiane Nascimento Santos +2
The growth of graphene on copper by atmospheric pressure chemical vapor deposition in a system free of pumping equipment is investigated. The emphasis is put on the necessity of hy…