High-temperature-grown buffer layer boosts electron mobility in epitaxial La-doped BaSnO${}_3$/SrZrO${}_3$ heterostructures

Arnaud P. Nono Tchiomo, Wolfgang Braun, Bryan P. Doyle +4

By inserting a SrZrO${}_3$ buffer layer between the film and the substrate, we demonstrate a significant reduction of the threading dislocation density with an associated improvement…