activity
20112026
most citedOrientation Controlled Anisotropy in Single Crystals of Quasi-1D BaTiS3

26 citations · 76 across the 18 of their papers we have counts for

collaborators

19 papers

cond-mat.mtrl-sci2026

Activating Basal Planes in Transition Metal Dichalcogenides for CO2 Reduction to CO through Alloying

Eric Montufar-Morales, Daniel Rinder, Pravan Omprakash +2

Transition metal dichalcogenides (TMDCs) have emerged as highly tunable platforms for electrocatalysis, particularly for the CO2 reduction reaction (CO2RR). While TMDC edge sites e…

cond-mat.mtrl-sci2026

Twist-induced Out-of-plane Ferroelectricity in Bilayer Hafnia

Jian Huang, Gwan Yeong Jung, Pravan Omprakash +6

Ferroelectric HfO2 is a promising candidate for next-generation memory devices due to its CMOS compatibility and ability to retain polarization at nanometer scales. However, the po…

cond-mat.mtrl-sci2025

Design Rules and Discovery of Face-Sharing Hexagonal Perovskites

M. J. Swamynadhan, Gwan Yeong Jung, Pravan Omprakash +1

Hexagonal perovskites with face-sharing octahedral connectivity are an underexplored class of materials. We propose quantitative design principles for stabilizing face-sharing ABX3…

cond-mat.mtrl-sci2025

Hole-doping reduces the coercive field in ferroelectric hafnia

Pravan Omprakash, Gwan Yeong Jung, Guodong Ren +1

Ferroelectric hafnia (HfO2) holds promise for next-generation memory and logic applications because of its CMOS compatibility. However, the high coercive field required for polariz…

cond-mat.mtrl-sci2025

Sub-nm2 ferroelectric domains via charged 180 degree walls in ZrO2

Nashrah Afroze, Hamoon Fahrvandi, Guodong Ren +31

Flat phonon bands in fluorite ferroelectrics (HfO2 or ZrO2) shrink polar domains laterally to an irreducible half-unit-cell width (0.27 nm) within which the vertical arrangement of…

cond-mat.mtrl-sci2025

Towards Atomic-Scale Control over Structural Modulations in Quasi-1D Chalcogenides for Colossal Optical Anisotropy

Guodong Ren, Shantanu Singh, Gwan Yeong Jung +10

Optically anisotropic materials are sought after for tailoring the polarization of light. Recently, colossal optical anisotropy was reported in a quasi-one-dimensional chalcogenide…

cond-mat.mtrl-sci2025★ 1 cited

Strong tunability of epitaxial relationship and reconstruction at improper ferroelectric interface

Xin Li, Yu Yun, Guodong Ren +4

The atomic structures at epitaxial film-substrate interfaces determine scalability of thin films and can result in new phenomena. However, it is challenging to control the interfac…

cond-mat.mtrl-sci2025★ 1 cited

Antiferroelectricity with metastable polar state from Kittel model

Amit Kumar Shah, Xin Li, Guodong Ren +3

We have revisited the Kittel model that describes antiferroelectricity (AFE) in terms of two sublattices of spontaneous polarization with antiparallel couplings. By constructing th…

cond-mat.mtrl-sci2024★ 1 cited

Polarization Pinning at Antiphase Boundaries in Multiferroic YbFeO

Guodong Ren, Pravan Omprakash, Xin Li +4

The switching characteristics of ferroelectrics and multiferroics are influenced by the interaction of topological defects with domain-walls. We report on the pinning of polarizati…

cond-mat.mtrl-sci2024

Improper flexoelectricity in hexagonal rare-earth ferrites

Xin Li, Guodong Ren, Yu Yun +5

Flexoelectricity is a universal effect that generates electric polarization due to broken inversion symmetry caused by local strain gradient. The large strain gradient at nanoscale…

cond-mat.mtrl-sci2024★ 7 cited

Strain-driven stabilization of a room-temperature chiral multiferroic with coupled ferroaxial and ferroelectric order

Guodong Ren, Gwan Yeong Jung, Huandong Chen +9

Noncollinear ferroic materials are sought after as testbeds to explore the intimate connections between topology and symmetry, which result in electronic, optical and magnetic func…

cond-mat.mtrl-sci2024

Antiferroelectric Hafnia Down to the 2D Limit

Xin Li, Guodong Ren, Haidong Lu +16

Antiferroelectricity is a material property characterized by alternating electric dipoles spontaneously ordered in antiparallel directions. Antiferroelectrics are promising for ene…

cond-mat.mtrl-sci2024

Emergent Atomic Scale Polarisation Vortices in BaTiS3

Boyang Zhao, Gwan Yeong Jung, Shantanu Singh +21

Topological defects, such as vortices and skyrmions in magnetic and dipolar systems, can give rise to properties that are not observed in typical magnets and dielectrics. Here, we…

cond-mat.mtrl-sci2024★ 10 cited

Molten flux growth of single crystals of quasi-1D hexagonal chalcogenide BaTiS3

Huandong Chen, Shantanu Singh, Hongyan Mei +7

BaTiS3, a quasi-1D complex chalcogenide, has gathered considerable scientific and technological interest due to its giant optical anisotropy and electronic phase transitions. Howev…

cond-mat.mtrl-sci2023★ 14 cited

Giant Modulation of Refractive Index from Picoscale Atomic Displacements

Boyang Zhao, Guodong Ren, Hongyan Mei +21

Structural disorder has been shown to enhance and modulate magnetic, electrical, dipolar, electrochemical, and mechanical properties of materials. However, the possibility of obtai…

cond-mat.mtrl-sci2023★ 2 cited

Topological interfacial states in ferroelectric domain walls of two-dimensional bismuth

Wei Luo, Yang Zhong, Hongyu Yu +4

Using machine learning methods, we explore different types of domain walls in the recently unveiled single-element ferroelectric, the bismuth monolayer [Nature 617, 67 (2023)]. Rem…

cond-mat.mtrl-sci2022★ 14 cited

Quasi-epitaxial growth of BaTiS films

M. Surendran, B. Zhao, G. Ren +7

Perovskite chalcogenides have emerged as a new class of semiconductors with tunable band gap in the visible-infrared region. High quality thin films are critical to understand the…

cond-mat.mtrl-sci2022★ 26 cited

Orientation Controlled Anisotropy in Single Crystals of Quasi-1D BaTiS3

Boyang Zhao, Md Shafkat Bin Hoque, Gwan Yeong Jung +17

Low-dimensional materials with chain-like (one-dimensional) or layered (twodimensional) structures are of significant interest due to their anisotropic electrical, optical, thermal…

cond-mat.mes-hall2011

Defect states and disorder in charge transport in semiconductor nanowires

Dongkyun Ko, X. W. Zhao, Kongara M. Reddy +8

We present a comprehensive investigation into disorder-mediated charge transport in InP nanowires in the statistical doping regime. At zero gate voltage transport is well described…