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physics.comp-ph2011★ 44 cited
Molecular dynamics simulation of the recrystallization of amorphous Si layers: Comprehensive study of the dependence of the recrystallization velocity on the interatomic potential
Christophe Krzeminski, Quentin Brulin, V. Cuny +3
The molecular dynamics method is applied to simulate the recrystallization of an amorphous/crystalline silicon interface. The atomic structure of the amorphous material is construc…
physics.comp-ph2011★ 8 cited
Solid phase epitaxy amorphous silicon re-growth: some insight from empirical molecular dynamics simulation
Christophe Krzeminski, Evelyne Lampin
The modelling of interface migration and the associated diffusion mechanisms at the nanoscale level is a challenging issue. For many technological applications ranging from nanoele…