activity
20032020
most citedTheory of electrical rectification in a molecular monolayer

180 citations · 627 across the 19 of their papers we have counts for

collaborators
Showing cond-mat.mtrl-sciShow all

10 papers · 1 filter

cond-mat.mtrl-sci2012★ 25 cited

Optical absorption of silicon nanowires

Tao Xu, Yannick Lambert, Christophe Krzeminski +6

We report on simulations and measurements of the optical absorption of silicon nanowires (NWs) versus their diameter. We first address the simulation of the optical absorption base…

cond-mat.mtrl-sci2012★ 12 cited

Anisotropic Vapor HF etching of silicon dioxide for Si microstructure release

Vikram Passi, Ulf Sodervall, Bengt Nilsson +6

Damages are created in a sacrificial layer of silicon dioxide by ion implantation to enhance the etch rate of silicon-dioxide in liquid and vapor phase hydrofluoric acid. The etch…

cond-mat.mtrl-sci2012★ 35 cited

Understanding of the Retarded Oxidation Effects in Silicon Nanostructures

C. Krzeminski, X. -L. Han, G. Larrieu

In-depth understanding of the retarded oxidation phenomenon observed during the oxidation of silicon nanostructures is proposed. The wet thermal oxidation of various silicon nanost…

cond-mat.mtrl-sci2011★ 23 cited

Energy-band engineering for improved charge retention in fully self-aligned double floating-gate single-electron memories

Xiaohui Tang, Christophe Krzeminski, Aurélien Lecavelier des Etangs-Levallois +9

We present a new fully self-aligned single-electron memory with a single pair of nano floating gates, made of different materials (Si and Ge). The energy barrier that prevents stor…

cond-mat.mtrl-sci2011★ 14 cited

A single layer hydrogen silsesquioxane (HSQ) based lift-off process for germanium and platinum

Vikram Passi, Aurélie Lecestre, Christophe Krzeminski +3

Primarily used as etch mask, single layer hydrogen silsesquioxane has never been investigated for lift-off technique. In this article, we propose a new technique where a single lay…

cond-mat.mtrl-sci2011

Optimisation and Simulation of an Alternative nano-flash Memory: the SASEM device

Christophe Krzeminski, Emmanuel Dubois, Xiaohui Tang +3

Process simulation are performed in order to simulate the full fabrication process of an alternative nano-flash memory in order to optimise it and to improve the understanding of t…