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M. Leszczyński

2 papers hereh-index 26 citations5 works total

Matching runs newest-first, so older work may not be attached to this profile yet.

author position
  • middle author1
  • last author1

Across the 2 of 2 papers where every author was matched, so the position is known.

fields
  • cond-mat.mtrl-sci1
  • cond-mat.stat-mech1
same name
  • M. Leszczyński — 3 papers, h 29

Either other researchers who publish under this name, or the same person where the external sources have not merged their records.

identity via Semantic Scholar / OpenAlex

most citedInfluence of GaN substrate miscut on the XRD quantification of plastic relaxation in InGaN

5 citations · 5 across the 2 of their papers we have counts for

collaborators

2 papers

cond-mat.mtrl-sci2024★ 5 cited

Influence of GaN substrate miscut on the XRD quantification of plastic relaxation in InGaN

J. Moneta, M. Krysko, J. Z. Domagala +5

Strain relaxation of thick InGaN layers was studied in order to develop technology of InGaN templates for deposition of InGaN Quantum Wells (QWs) and InGaN layers of high-In-conten…

cond-mat.stat-mech2011

Structures built by steps of evaporated crystal surface Monte Carlo simulations and experimental data for GaN epi layers

Magdalena A. Załuska-Kotur, Filip Krzyżewski, Stanisław Krukowski +2

We present Monte Carlo simulation data obtained for the annealed surface GaN(0001) and compare them with the experimental data. High temperature particle evaporation is a part of s…

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