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researcher

M. Leszczyński

3 papers hereh-index 293.5k citations140 works total

Matching runs newest-first, so older work may not be attached to this profile yet.

author position
  • middle author1
  • last author2

Across the 3 of 3 papers where every author was matched, so the position is known.

fields
  • cond-mat.mtrl-sci3
same name
  • M. Leszczyński — 2 papers, h 2

Either other researchers who publish under this name, or the same person where the external sources have not merged their records.

identity via Semantic Scholar / OpenAlex

activity
20042021
most citedPolarization doping ab initio verification of the concept charge conservation and nonlocality

6 citations · 6 across the 1 of their papers we have counts for

collaborators

3 papers

cond-mat.mtrl-sci2021★ 6 cited

Polarization doping ab initio verification of the concept charge conservation and nonlocality

Ashfaq Ahmad, Pawel Strak, Pawel Kempisty +10

In this work, we study the emergence of polarization doping in AlxGa1-xN layers with graded composition from a theoretical viewpoint. We demonstrate that the charge conservation la…

cond-mat.mtrl-sci2016

Hybrid reciprocal lattice: application to layer stress appointment in GaAlN/GaN(0001) systems with patterned substrates

Jarosław Z. Domagała, Sérgio L. Morelhão, Marcin Sarzyński +3

Epitaxy of semiconductors is a process of tremendous importance in applied science and optoelectronic industry. Controlling of defects introduced during epitaxial growth is a key p…

cond-mat.mtrl-sci2004

Surface and electronic structure of MOCVD-grown Ga(0.92)In(0.08)N investigated by UV and X-ray photoelectron spectroscopies

B. J. Kowalski, I. A. Kowalik, R. J. Iwanowski +10

The surface and electronic structure of MOCVD-grown layers of Ga(0.92)In(0.08)N have been investigated by means of photoemission. An additional feature at the valence band edge, wh…

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