activity
20092023
most citedSuperconductivity in Ru substituted BaFe2-xRuxAs2

124 citations · 304 across the 23 of their papers we have counts for

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Showing cond-mat.mtrl-sciShow all

9 papers · 1 filter

cond-mat.mtrl-sci2022

Temperature and terahertz frequency dependence of the dielectric properties of Fe3O4 thin films deposited on Si substrate

Ashish Khandelwal, L. S. Sharath Chandra, Shilpam Sharma +4

The FeO/Si films are considered to be promising materials for THz spintronic applications due to their high temperature magnetic transition and semiconducting properties. I…

cond-mat.mtrl-sci2017

Anomalous transport properties in Nb/Bi1.95Sb0.05Se3 hybrid structure

E. P. Amaladass, Shilpam Sharma, A. V. Thanikai Arasu +2

We report the proximity induced anomalous transport behavior in a Nb Bi1.95Sb0.05Se3 heterostructure. Mechanically Exfoliated single crystal of Bi1.95Sb0.05Se3 topological insulato…

cond-mat.mtrl-sci2016★ 2 cited

Effect of Sb substitution on the Topological Surface States in Bi_{2}Se_{3} single crystals: a magneto-transport study

T. R. Devidas, E. P. Amaladass, Shilpam Sharma +4

Magneto-transport measurements have been carried out on Bi2-xSbxSe3 (x = 0, 0.05, 0.1, 0.3, 0.5) single crystals at 4.2 K temperature in the magnetic field range of -15 T to 15 T.…

cond-mat.mtrl-sci2015★ 2 cited

Studies on proximity effect in Mo/Bi1.95Sb0.05Se3 hybrid structure

E. P. Amaladass, Shilpam Sharma, T. R. Devidas +1

Proximity effect in a mechanically exfoliated Bi1.95Sb0.05Se3 topological insulator (TI) single crystal partially covered with disordered superconducting (SC) Mo thin film is repor…

cond-mat.mtrl-sci2015★ 26 cited

Magneto-transport behaviour of Bi2Se3-xTex: Role of disorder

E. P. Amaladass, T. R. Devidas, Shilpam Sharma +3

Magnetoresistance and Hall resistance measurements have been carried out in fastcooled single crystals of Bi2Se3-xTex (x: 0 to 2) in 4 to 300 K temperature range, under magnetic fi…

cond-mat.mtrl-sci2015★ 5 cited

Optical band gap and associated band-tails in nanocrystalline AlN thin films grown by reactive IBSD at different substrate temperatures

Neha Sharma, Shilpam Sharma, K. Prabakar +4

AlN thin films have been grown on Si (100) substrates by reactive ion beam sputter deposition (IBSD) at different substrate temperatures varying from room temperature (RT) to 500oC…