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researcher

M. S. Rahman

3 papers hereh-index 10374 citations39 works total

Matching runs newest-first, so older work may not be attached to this profile yet.

author position
  • first author2
  • middle author1

Across the 3 of 3 papers where every author was matched, so the position is known.

fields
  • cond-mat.mtrl-sci2
  • physics.ins-det1
same name
  • M. S. Rahman — 8 papers, h 42
  • M. S. Rahman — 5 papers, h 2
  • M. S. Rahman — 3 papers, h 13
  • M. S. Rahman — 3 papers, h 1
  • M. S. Rahman — 3 papers, h 3
  • M. S. Rahman — 2 papers, h 9

Either other researchers who publish under this name, or the same person where the external sources have not merged their records.

identity via Semantic Scholar / OpenAlex

activity
20112020
most citedGate Stack Dielectric Degradation of Rare-Earth Oxides Grown on High Mobility Ge Substrates

24 citations · 46 across the 3 of their papers we have counts for

collaborators

3 papers

physics.ins-det2020★ 10 cited

SABRE and the Stawell Underground Physics Laboratory: Dark Matter Research at the Australian National University

Lindsey J. Bignell, Elisabetta Barberio, Michaela B. Froehlich +13

The direct detection of dark matter is a key problem in astroparticle physics that generally requires the use of deep-underground laboratories for a low-background environment wher…

cond-mat.mtrl-sci2012★ 24 cited

Gate Stack Dielectric Degradation of Rare-Earth Oxides Grown on High Mobility Ge Substrates

Md. Shahinur Rahman, Evangelos K. Evangelou, Nikos Konofaos +1

We report on the dielectric degradation of Rare-Earth Oxides (REOs), when used as interfacial buffer layers together with HfO2 high-k films (REOs/HfO2) on high mobility Ge substrat…

cond-mat.mtrl-sci2011★ 12 cited

Dielectric relaxation and Charge trapping characteristics study in Germanium based MOS devices with HfO2 /Dy2O3 gate stacks

M. Shahinur Rahman, E . K. Evangelou

In the present work we investigate the dielectric relaxation effects and charge trapping characteristics of HfO2 /Dy2O3 gate stacks grown on Ge substrates. The MOS devices have bee…

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Not affiliated with arXiv. Researcher data from Semantic Scholar (ODC-BY) and OpenAlex.