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Selective Area Growth Rates of III-V Nanowires
Martin Espiñeira Cachaza, Anna Wulff Christensen, Daria Beznasyuk +6
Selective area growth (SAG) of semiconductors is a scalable method for fabricating gate-controlled quantum platforms. This letter reports on the adatom diffusion, incorporation, an…
Epitaxy of Semiconductor-Superconductor nanowires
P. Krogstrup, N. L. B. Ziino, W. Chang +6
Controlling the properties of semiconductor/metal interfaces is a powerful method for designing functionality and improving the performance of electrical devices. Recently semicond…
Highly Quantum-Confined InAs Nanoscale Membranes
Kuniharu Takei, Hui Fang, Bala Kumar +10
Nanoscale size-effects drastically alter the fundamental properties of semiconductors. Here, we investigate the dominant role of quantum confinement in the field-effect device prop…
Ultrathin compound semiconductor on insulator layers for high performance nanoscale transistors
Hyunhyub Ko, Kuniharu Takei, Rehan Kapadia +13
Over the past several years, the inherent scaling limitations of electron devices have fueled the exploration of high carrier mobility semiconductors as a Si replacement to further…