1.8k citations · 2.2k across the 2 of their papers we have counts for
3 papers
MoS2 P-type Transistors and Diodes Enabled by High Workfunction MoOx Contacts
Steven Chuang, Corsin Battaglia, Angelica Azcatl +8
The development of low-resistance source/drain contacts to transition metal dichalcogenides (TMDCs) is crucial for the realization of high-performance logic components. In particul…
High Performance Single Layered WSe2 p-FETs with Chemically Doped Contacts
Hui Fang, Steven Chuang, Ting Chia Chang +3
We report high performance p-type field-effect transistors based on single layered (thickness, ~0.7 nm) WSe2 as the active channel with chemically doped source/drain contacts and h…
Ultrathin compound semiconductor on insulator layers for high performance nanoscale transistors
Hyunhyub Ko, Kuniharu Takei, Rehan Kapadia +13
Over the past several years, the inherent scaling limitations of electron devices have fueled the exploration of high carrier mobility semiconductors as a Si replacement to further…