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Hole concentrations in doped gray α-Sn on InSb and CdTe measured with infrared ellipsometry
Jaden R. Love, Carlos A. Armenta, Atlantis K. Moses +5
Gray tin (α-Sn) layers with 30 nm thickness were grown on InSb (001) substrates using molecular beam epitaxy. The surface preparation of the substrates was adjusted to achieve eit…
Combining Quasiparticle Self-Consistent and Machine-Learned DFT+ to Assess Half-Metallicity in Co- and Ni-Based Heuslers
Zefeng Cai, Malcolm J. A. Jardine, Maituo Yu +7
Half-metallic Heusler compounds are of significant interest for spintronics. For device fabrication, compounds that can be epitaxially grown on III-V semiconductors are particularl…
Altermagnetic band splitting in 10 nm epitaxial CrSb thin films
Sandra Santhosh, Paul Corbae, Wilson J. Yanez-Parreno +14
Altermagnets are a newly identified family of collinear antiferromagnets with momentum-dependent spin-split band structure of non-relativistic origin, derived from spin-group symme…
Sn-InAs nanowire shadow-defined Josephson junctions
Amritesh Sharma, An-Hsi Chen, Connor P. Dempsey +6
Interest in hybrid electronic devices for quantum science is driving the research into superconductor-semiconductor materials combinations. Here we study InAs nanowires coated with…
Near-half-metallic state in the half Heusler PtMnSb film on a III-V substrate
Shinichi Nishihaya, Malcolm J. A. Jardine, Hadass S. Inbar +9
The interplay between half-metallic ferromagnetism and spin-orbit coupling within the inversion symmetry-broken structure of half Heuslers provides an ideal platform for various sp…