12 papers
Hole concentrations in doped gray α-Sn on InSb and CdTe measured with infrared ellipsometry
Jaden R. Love, Carlos A. Armenta, Atlantis K. Moses +5
Gray tin (α-Sn) layers with 30 nm thickness were grown on InSb (001) substrates using molecular beam epitaxy. The surface preparation of the substrates was adjusted to achieve eit…
Tunable anharmonicity in Sn-InAs nanowire transmons beyond the short junction limit
Amrita Purkayastha, Amritesh Sharma, Param J. Patel +11
The anharmonicity of a transmon qubit, defined as the difference in energy level spacing, is a key design parameter. In transmons built from hybrid superconductor-semiconductor Jos…
Combining Quasiparticle Self-Consistent and Machine-Learned DFT+ to Assess Half-Metallicity in Co- and Ni-Based Heuslers
Zefeng Cai, Malcolm J. A. Jardine, Maituo Yu +7
Half-metallic Heusler compounds are of significant interest for spintronics. For device fabrication, compounds that can be epitaxially grown on III-V semiconductors are particularl…
Cryogenic growth of aluminum: structural morphology, optical properties, superconductivity and microwave dielectric loss
Wilson J. Yánez-Parreño, Teun A. J. van Schijndel, Anthony P. McFadden +7
We explore the molecular beam epitaxy synthesis of superconducting aluminum thin films grown on c-plane sapphire substrates at cryogenic temperatures of 6 K and compare their behav…
Transmon qubit using Sn as a junction superconductor
Amrita Purkayastha, Amritesh Sharma, Param J. Patel +11
Superconductor qubits typically use aluminum-aluminum oxide tunnel junctions to provide the non-linear inductance. Junctions with semiconductor barriers make it possible to vary th…
Spin-orbit coupling in digital alloyed InGaAs quantum wells
Jason T. Dong, Yilmaz Gul, Irene Villar Rodriguez +5
Increasing the spin-orbit coupling in InGaAs quantum wells is desirable for applications involving spintronics and topological quantum computing. Digital alloying is an approach to…