6 papers
Strain-induced modification of spin-optical dynamics in silicon vacancy centers for integrated quantum technologies
Maximilian Hollendonner, Fedor Dzmitryevich Hrunski, Daniel Scheller +8
Silicon vacancy (VSi) centers in 4H silicon carbide have emerged as a highly promising platform for semiconductor-based quantum technologies, combining excellent spin and optical p…
Localization and coherent control of 25 nuclear spins in Silicon Carbide
Pierre Kuna, Erik Hesselmeier-Hüttmann, Phillip Schillinger +7
Optically addressable spin defects are excellent candidate platform for quantum sensing and quantum network. Nuclear spins coupled to color centers naturally enable long lived quan…
Waveguide-integrated colour centres in silicon carbide with broadband photonic crystal reflectors for efficient readout
Marcel Krumrein, Julian M. Bopp, Timo Steidl +5
Spin-active colour centres in 4H silicon carbide are promising candidates as building blocks for quantum information applications. To increase the photon count rate of the emitters…
Cavity enhancement of V2 centers in 4H-SiC with a fiber-based Fabry-Pérot microcavity
Jannis Hessenauer, Jonathan Körber, Misagh Ghezellou +5
Silicon vacancy centers in 4H-silicon carbide (SiC) host a long-lived electronic spin and simultaneously possess spin-resolved optical transitions, making them a great candidate fo…
Single V2 defect in 4H Silicon Carbide Schottky diode at low temperature
Timo Steidl, Pierre Kuna, Erik Hesselmeier-Hüttmann +10
Nanoelectrical and photonic integration of quantum optical components is crucial for scalable solid-state quantum technologies. Silicon carbide stands out as a material with mature…
Spectral stability of V2 centres in sub-micron 4H-SiC membranes
Jonah Heiler, Jonathan Körber, Erik Hesselmeier +9
Colour centres in silicon carbide emerge as a promising semiconductor quantum technology platform with excellent spin-optical coherences.However, recent efforts towards maximising…