42 citations · 124 across the 7 of their papers we have counts for
7 papers
Investigation of Lasing in Highly Strained Germanium at the Crossover to Direct Band Gap
Francesco Armand Pilon, Yann-Michel Niquet, Jeremie Chretien +8
Efficient and cost-effective Si-compatible lasers are a long standing wish of the optoelectronic industry. In principle, there are two options. For many applications, lasers based…
Light-hole states in a strained quantum dot: numerical calculation and phenomenological models
K. Moratis, J. Cibert, D. Ferrand +1
Starting from the numerical solution of the 6-band \textbf{k.p} description of a lattice-mismatched ellipsoidal quantum dot situated inside a nanowire, including a spin Zeeman effe…
Accurate strain measurements in highly strained Ge microbridges
A. Gassenq, S. Tardif, K. Guilloy +16
Ge under high strain is predicted to become a direct bandgap semiconductor. Very large deformations can be introduced using microbridge devices. However, at the microscale, strain…
Contact resistances in trigate and FinFET devices in a Non-Equilibrium Green's Functions approach
Léo Bourdet, Johan Pelloux-Prayer, François Triozon +5
We compute the contact resistances in trigate and FinFET devices with widths and heights in the 4 to 24 nm range using a Non-Equilibrium Green's Functions approach. Ele…
Control of the ionization state of 3 single donor atoms in silicon
Benoit Voisin, Manuel Cobian, Xavier Jehl +4
By varying the gate and substrate voltage in a short silicon-on-insulator trigate field effect transistor we control the ionization state of three arsenic donors. We obtain a good…
Interplay between Aharonov-Bohm interference and parity selective tunneling in zigzag graphene nanoribbon rings
Viet-Hung Nguyen, Yann-Michel Niquet, Philippe Dollfus
We report a numerical study on Aharonov-Bohm (AB) effect and parity selective tunneling in pn junctions based on zigzag graphene nanoribbon rings. We find that when applying a magn…
Ab initio calculation of the binding energy of impurities in semiconductors: Application to Si nanowires
Y. M. Niquet, L. Genovese, C. Delerue +1
We discuss the binding energy E_b of impurities in semiconductors within density functional theory (DFT) and the GW approximation, focusing on donors in nanowires as an example. We…