186 citations · 236 across the 3 of their papers we have counts for
3 papers
Control of the ionization state of 3 single donor atoms in silicon
Benoit Voisin, Manuel Cobian, Xavier Jehl +4
By varying the gate and substrate voltage in a short silicon-on-insulator trigate field effect transistor we control the ionization state of three arsenic donors. We obtain a good…
Transport properties of 2D graphene containing structural defects
Aurelien Lherbier, Simon M. -M. Dubois, Xavier Declerck +3
We propose an extensive report on the simulation of electronic transport in 2D graphene in presence of structural defects. Amongst the large variety of such defects in sp carbo…
Charged impurity scattering and mobility in gated silicon nanowires
Martin P. Persson, Hector Mera, Yann-Michel Niquet +2
We study the effects of charged impurity scattering on the electronic transport properties of <110>-oriented Si nanowires in a gate-all-around geometry, where the impurity potentia…