most citedIn-situ study and modeling of the reaction kinetics during molecular beam epitaxy of GeO2 and its etching by Ge

15 citations · 15 across the 1 of their papers we have counts for

collaborators

1 paper

cond-mat.mtrl-sci2023★ 15 cited

In-situ study and modeling of the reaction kinetics during molecular beam epitaxy of GeO2 and its etching by Ge

Wenshan Chen, Kingsley Egbo, Hans Tornatzky +3

Rutile GeO2 has been predicted to be an ultra-wide bandgap semiconductor suitable for future power electronics devices while quartz-like GeO2 shows piezoelectric properties. To exp…