7 citations · 9 across the 2 of their papers we have counts for
2 papers
cond-mat.mtrl-sci2024★ 7 cited
Kinetics, thermodynamics, and catalysis of the cation incorporation into GeO2, SnO2, and (SnxGe1-x)O2 during suboxide molecular beam epitaxy
Wenshan Chen, Kingsley Egbo, Joe Kler +3
Rutile GeO is a promising ultra-wide bandgap semiconductor for future power electronic devices whose alloy with the wide bandgap semiconductor rutile-SnO enables bandgap en…
cond-mat.mtrl-sci2024★ 2 cited
Etching of elemental layers in oxide molecular beam epitaxy by O2-assisted formation and evaporation of their volatile suboxide: The examples of Ga and Ge
Wenshan Chen, Kingsley Egbo, Huaide Zhang +2
The delivery of an elemental cation flux to the substrate surface in the oxide molecular beam epitaxy (MBE) chamber has been utilized not only for the epitaxial growth of oxide thi…