activity
19982002
most citedNonequilibrium Electron Distribution in Presence of Kondo Impurities

26 citations · 142 across the 8 of their papers we have counts for

collaborators

8 papers

cond-mat.mes-hall2002★ 23 cited

Conductance of the single-electron transistor: A comparison of experimental data with Monte Carlo calculations

C. Wallisser, B. Limbach, P. vom Stein +4

We report on experimental results for the conductance of metallic single-electron transistors as a function of temperature, gate voltage and dimensionless conductance. In contrast…

cond-mat.mes-hall2002★ 23 cited

Magnetic field effects in energy relaxation mediated by Kondo impurities

G. Goeppert, Y. M. Galperin, B. L. Altshuler +1

We study the energy distribution function of quasiparticles in voltage biased mesoscopic wires in presence of magnetic impurities and applied magnetic field. The system is describe…

cond-mat.mes-hall2001★ 26 cited

Nonequilibrium Electron Distribution in Presence of Kondo Impurities

Georg Goeppert, Hermann Grabert

We study the energy relaxation of quasiparticles in voltage biased mesoscopic wires in presence of magnetic impurities. The renormalization of the exchange interaction of Kondo imp…

cond-mat.mes-hall2000★ 9 cited

Charge Fluctuations in the Single Electron Box

Georg Goeppert, Hermann Grabert

Quantum fluctuations of the charge in the single electron box are investigated. Based on a diagrammatic expansion we calculate the average island charge number and the effective ch…

cond-mat.mes-hall2000★ 14 cited

Conductance of the Single Electron Transistor for Arbitrary Tunneling Strength

Georg Goeppert, Bruno Huepper, Hermann Grabert

We study the temperature and gate voltage dependence of the conductance of the single electron transistor focusing on highly conducting devices. Electron tunneling is treated nonpe…

cond-mat.mes-hall1999★ 9 cited

Coulomb Charging Effects for Finite Channel Number

Georg Goeppert, Hermann Grabert, Christian Beck

We consider quantum fluctuations of the charge on a small metallic grain caused by virtual electron tunneling to a nearby electrode. The average electron number and the effective c…

cond-mat.mes-hall1998★ 12 cited

High Temperature Conductance of the Single Electron Transistor

Georg Goeppert, Hermann Grabert

The linear conductance of the single electron transistor is determined in the high temperature limit. Electron tunneling is treated nonperturbatively by means of a path integral fo…

cond-mat.mes-hall1998★ 26 cited

Effect of the Tunneling Conductance on the Coulomb Staircase

G. Goeppert, H. Grabert, N. V. Prokof'ev +1

Quantum fluctuations of the charge in the single electron box are investigated. The rounding of the Coulomb staircase caused by virtual electron tunneling is determined by perturba…