Charge Fluctuations in the Single Electron Box

Abstract

Quantum fluctuations of the charge in the single electron box are investigated. Based on a diagrammatic expansion we calculate the average island charge number and the effective charging energy in third order in the tunneling conductance. Near the degeneracy point where the energy of two charge states coincides, the perturbative approach fails, and we explicitly resum the leading logarithmic divergencies to all orders. The predictions for zero temperature are compared with Monte Carlo data and with recent renormalization group results. While good agreement between the third order result and numerical data justifies the perturbative approach in most of the parameter regime relevant experimentally, near the degeneracy point and at zero temperature the resummation is shown to be insufficient to describe strong tunneling effects quantitatively. We also determine the charge noise spectrum employing a projection operator technique. Former perturbative and semiclassical results are extended by the approach.

20 pages, 15 figures

References in corpus (6)

• Strong Tunneling in the Single-Electron Box
• Strong Charge Fluctuations in the Single-Electron Box: A Quantum Monte Carlo Analysis
• Single Electron Tunneling at Large Conductance: The Semiclassical Approach
• Conductance of the Single Electron Transistor for Arbitrary Tunneling Strength
• High Temperature Conductance of the Single Electron Transistor
• Coulomb Charging Effects for Finite Channel Number

Cited by in corpus (4)

• Many-body theory of electronic transport in single-molecule heterojunctions
• Coherence and Coulomb blockade in single electron devices: a unified treatment of interaction effects
• The problem of "macroscopic charge quantization" in single-electron devices
• Grand canonical partition function of a serial metallic island system