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physics.app-ph2023
Monocrystalline Si/-GaO p-n heterojunction diodes fabricated via grafting
Jiarui Gong, Donghyeok Kim, Hokyung Jang +19
The -GaO has exceptional electronic properties with vast potential in power and RF electronics. Despite the excellent demonstrations of high-performance unipolar devices…
physics.app-ph2023
Comprehensive TCAD Simulation Study of High Voltage (>650V) Common Drain Bidirectional AlGaN/GaN HEMTs
Md Tahmidul Alam, Chirag Gupta
A broad TCAD simulation analysis of a monolithic common drain bidirectional GaN HEMT was performed. We used gate-to-gate distances of 4 microns and 6 microns for the devices optimi…