7 citations · 11 across the 2 of their papers we have counts for
2 papers
cond-mat.mtrl-sci2023★ 7 cited
Growth kinetics and substrate stability during high-temperature molecular beam epitaxy of AlN nanowires
Philipp John, Mikel Gómez Ruiz, Len van Deurzen +5
We study the molecular beam epitaxy of AlN nanowires between 950 and 1215 °C, well above the usual growth temperatures, to identify optimal growth conditions. The nanowires are gro…
cond-mat.mtrl-sci2022★ 4 cited
Density control of GaN nanowires at the wafer scale using self-assembled SiN patches on sputtered TiN(111)
Thomas Auzelle, Miriam Oliva, Philipp John +3
The self-assembly of heteroepitaxial GaN nanowires using either molecular beam epitaxy (MBE) or metal-organic vapor phase epitaxy (MOVPE) mostly results in wafer-scale ensembles wi…