Jun Luo

activity

20212023

most citedFirst-principles study of oxygen vacancy defects in orthorhombic Hf

_{0.5}

_{0.5}

_{2}

/SiO

_{2}

/Si gate stack

24 citations · 46 across the 4 of their papers we have counts for

collaborators

Showing 2022Show all

2 papers · 1 filter

physics.ins-det2022★ 8 cited

Design and testing of LGAD sensor with shallow carbon implantation

Kewei Wu, Xuewei Jia, Tao Yang +26

The low gain avalanche detectors (LGADs) are thin sensors with fast charge collection which in combination with internal gain deliver an outstanding time resolution of about 30 ps.…

cond-mat.mtrl-sci2022★ 24 cited

First-principles study of oxygen vacancy defects in orthorhombic Hf $_{0.5}$ Zr $_{0.5}$ O $_{2}$ /SiO $_{2}$ /Si gate stack

Junshuai Chai, Hao Xu, Jinjuan Xiang +9

The gate defect of the ferroelectric HfO $_{2}$ -based Si field-effect transistor (Si FeFET) plays a dominant role in its reliability issue. The first-principles calculations are an ef…

Design and testing of LGAD sensor with shallow carbon implantation

First-principles study of oxygen vacancy defects in orthorhombic Hf0.5​Zr0.5​O2​/SiO2​/Si gate stack

First-principles study of oxygen vacancy defects in orthorhombic Hf $_{0.5}$ Zr $_{0.5}$ O $_{2}$ /SiO $_{2}$ /Si gate stack