199 citations · 554 across the 8 of their papers we have counts for
Showing 2009 · cond-mat.mes-hallShow all
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cond-mat.mes-hall2009★ 26 cited
Improvement of Morphology and Free Carrier Mobility through Argon-Assisted Growth of Epitaxial Graphene on Silicon Carbide
Joseph L. Tedesco, Brenda L. VanMil, Rachael L. Myers-Ward +7
Graphene was epitaxially grown on both the C- and Si-faces of 4H- and 6H-SiC(0001) under an argon atmosphere and under high vacuum conditions. Following growth, samples were imaged…
cond-mat.mes-hall2009★ 176 cited
Hall Effect Mobility of Epitaxial Graphene Grown on Silicon Carbide
Joseph L. Tedesco, Brenda L. VanMil, Rachael L. Myers-Ward +7
Epitaxial graphene films were grown in vacuo by silicon sublimation from the (0001) and (000-1) faces of 4H- and 6H-SiC. Hall effect mobilities and sheet carrier densities of the f…