Cr2O3/\b{eta}-Ga2O3 Heterojunction Diodes with Orientation-Dependent Breakdown Electric Field up to 12.9 MV/cm

Yizheng Liu, Haochen Wang, Carl Peterson +3

We report the fabrication of Cr2O3/\b{eta}-Ga2O3 heterojunction diodes using reactive magnetron sputtering of Cr2O3 on highly doped \b{eta}-Ga2O3 bulk substrates along (100), (010)…