most citedUnveiling microstructural damage for leakage current degradation in SiC Schottky diode after heavy ions irradiation under 200 V

18 citations · 18 across the 1 of their papers we have counts for

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cond-mat.mtrl-sci2023★ 18 cited

Unveiling microstructural damage for leakage current degradation in SiC Schottky diode after heavy ions irradiation under 200 V

Xiaoyu Yan, Pengfei Zhai, Chen Yang +8

Single-event burnout and single-event leakage current (SELC) in SiC power devices induced by heavy ions severely limit their space application, and the underlying mechanism is stil…