S. Krishnamoorthy

activity

20242026

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Showing cond-mat.mtrl-sciShow all

6 papers · 1 filter

cond-mat.mtrl-sci2026

Control of Extraordinary Optical Transmission in Resonant Terahertz Gratings via Lateral Depletion in an AlGaN-GaN Heterostructure

Geofrey Nyabere, Hunter Ellis, Miguel Gomez +7

Periodic metallic gratings on substrates can support a range of electromagnetic modes, such as leaky waveguide, guided-resonant, and Fabry-Perot (FP) cavity modes, which can strong…

cond-mat.mtrl-sci2025

Realization of Insulating Buffer Layers via MOCVD-Grown Nitrogen-Doped (010) \b{eta}-Ga2O3

Rachel Kahler, Carl Peterson, Sriram Krishnamoorthy

We present MOCVD-grown, nitrogen-doped \b{eta}-Ga2O3 films as an insulating buffer layer on Fe-doped (010) \b{eta}-Ga2O3 substrates in lieu of 49% HF treatment to remove unintentio…

cond-mat.mtrl-sci2025

Cr2O3/\b{eta}-Ga2O3 Heterojunction Diodes with Orientation-Dependent Breakdown Electric Field up to 12.9 MV/cm

Yizheng Liu, Haochen Wang, Carl Peterson +3

We report the fabrication of Cr2O3/\b{eta}-Ga2O3 heterojunction diodes using reactive magnetron sputtering of Cr2O3 on highly doped \b{eta}-Ga2O3 bulk substrates along (100), (010)…

cond-mat.mtrl-sci2025

Orientation-Dependent \b{eta}-Ga2O3 Heterojunction Diode with Atomic Layer Deposition (ALD) Grown NiO

Yizheng Liu, Shane M. W. Witsell, John F. Conley +1

This work reports the demonstration of ALD-deposited NiO/\b{eta}-Ga2O3 heterojunction diodes (HJDs) on low doped drift layer and highly doped (001) & (100) n+ substrates with exper…

cond-mat.mtrl-sci2024

Dielectric Reliability and Interface Trap Characterization in MOCVD grown In-situ Al $_{2}$ O $_{3}$ on $I^^{2}$ -Ga $_{2}$ O $_{3}$

Saurav Roy, Arkka Bhattacharyya, Carl Peterson +1

In this article, we investigate the in-situ growth of Al $_{2}$ O $_{3}$ on $I^^{2}$ -Ga $_{2}$ O $_{3}$ using metal-organic chemical vapor deposition (MOCVD) at a high temperature of 800Â°C. The Al$…

cond-mat.mtrl-sci2024

Effective uniaxial dielectric function tensor and optical phonons in ( $2 ˉ 01$ )-plane oriented $I^^{2}$ -Ga $_{2}$ O $_{3}$ films with equally-distributed six-fold rotation domains

Alyssa Mock, Steffen Richter, Alexis Papamichail +11

Monoclinic $I^^{2}$ -Ga $_{2}$ O $_{3}$ films grown on $c$ -plane sapphire have been shown to exhibit six $(2 ˉ 01)$ -plane oriented domains, which are equally-spaced-by-rotation around the s…

Control of Extraordinary Optical Transmission in Resonant Terahertz Gratings via Lateral Depletion in an AlGaN-GaN Heterostructure

Realization of Insulating Buffer Layers via MOCVD-Grown Nitrogen-Doped (010) \b{eta}-Ga2O3

Cr2O3/\b{eta}-Ga2O3 Heterojunction Diodes with Orientation-Dependent Breakdown Electric Field up to 12.9 MV/cm

Orientation-Dependent \b{eta}-Ga2O3 Heterojunction Diode with Atomic Layer Deposition (ALD) Grown NiO

Dielectric Reliability and Interface Trap Characterization in MOCVD grown In-situ Al2​O3​ on I^2-Ga2​O3​

Effective uniaxial dielectric function tensor and optical phonons in (2ˉ01)-plane oriented I^2-Ga2​O3​ films with equally-distributed six-fold rotation domains

Dielectric Reliability and Interface Trap Characterization in MOCVD grown In-situ Al $_{2}$ O $_{3}$ on $I^^{2}$ -Ga $_{2}$ O $_{3}$

Effective uniaxial dielectric function tensor and optical phonons in ( $2 ˉ 01$ )-plane oriented $I^^{2}$ -Ga $_{2}$ O $_{3}$ films with equally-distributed six-fold rotation domains