5 citations · 8 across the 4 of their papers we have counts for
4 papers
Analytical Physics-Based Modeling of Electron Channel Density in Nanosheet and Nanowire FETs
G. I. Zebrev, D. S. Malich
We propose a general physics-based approach for an accurate analytical calculation of the channel charge density in field-effect transistors as functions of the external gate biase…
Interface traps in graphene field effect devices: extraction methods and influence on characteristics
G. I. Zebrev, E. V. Melnik, A. A. Tselykovskiy
We study impact of the near-interfacial oxide traps on the C-V and I-V characteristics of graphene gated structures. Methods of extraction of interface trap level density in graphe…
Small-Signal Capacitance and Current Parameter Modeling in Large-Scale High-Frequency Graphene Field-Effect Transistors
Gennady I. Zebrev, Alexander A. Tselykovskiy, Daria K. Batmanova +1
The analytical model of the small-signal current and capacitance characteristics of RF graphene FET is presented. The model is based on explicit distributions of chemical potential…
Using Capacitance Methods for Interface Trap Level Density Extraction in Graphene Field-Effect Devices
Gennady I. Zebrev, Evgeny V. Melnik, Daria K. Batmanova
Methods of extraction of interface trap level density in graphene field-effect devices from the capacitance-voltage measurements are described and discussed. Interrelation with the…