most citedA Brief Review of Single Event Burnout Failure Mechanisms and Design Tolerances of Silicon Carbide MOSFETs

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physics.app-ph2023

Negative thermal expansion coefficient and amorphization in defective 4H-SiC

Christopher Allen Grome

Silicon Carbide (SiC) is a wide bandgap semiconductor material recently being used in replacement of traditional semiconductors for high-voltage power device applications. Radiatio…