25 citations · 25 across the 2 of their papers we have counts for
2 papers
physics.ins-det2023★ 25 cited
A Brief Review of Single Event Burnout Failure Mechanisms and Design Tolerances of Silicon Carbide MOSFETs
Christopher A. Grome, Wei Ji
Radiation hardening of the MOSFET is of the highest priority for sustaining high-power systems in the space radiation environment. SiC-based power electronics are being looked at a…
physics.app-ph2023
Negative thermal expansion coefficient and amorphization in defective 4H-SiC
Christopher Allen Grome
Silicon Carbide (SiC) is a wide bandgap semiconductor material recently being used in replacement of traditional semiconductors for high-voltage power device applications. Radiatio…