168 citations · 394 across the 9 of their papers we have counts for
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Phase- and angle-sensitive terahertz hot-electron bolometric plasmonic detectors based on FETs with graphene channel and composite h-BN/black-P/h-BN gate layer
V. Ryzhii, M. S. Shur, M. Ryzhii +3
We propose and analyze the terahertz (THz) bolometric vector detectors based on the graphene-channel field-effect transistors (GC-FET) with the black-P gate barrier layer or with t…
Helicity sensitive terahertz radiation detection by dual-grating-gate high electron mobility transistors
P. Faltermeier, P. Olbrich, W. Probst +5
We report on the observation of a radiation helicity sensitive photocurrent excited by terahertz (THz) radiation in dual-grating-gate (DGG) InAlAs/InGaAs/InAlAs/InP high electron m…
Damping of Terahertz Plasmons in Graphene Coupled with Surface Plasmons in Heavily-Doped Substrate
A. Satou, Y. Koseki, V. Ryzhii +2
Coupling of plasmons in graphene at terahert (THz) frequencies with surface plasmons in a heavily-doped substrate is studied theoretically. We reveal that a huge scattering rate ma…
Hydrodynamic electron transport and nonlinear waves in graphene
D. Svintsov, V. Vyurkov, V. Ryzhii +1
We derive the system of hydrodynamic equations governing the collective motion of massless fermions in graphene. The obtained equations demonstrate the lack of Galilean- and Lorent…
Transient stimulated emission from multi-split-gated graphene structure
A. Satou, F. T. Vasko, T. Otsuji +1
Mechanism of transient population inversion in graphene with multi-splitted (interdigitated) top-gate and grounded back gate is suggested and examined for the mid-infrared (mid-IR)…
Threshold of Terahertz Population Inversion and Negative Dynamic Conductivity in Graphene Under Pulse Photoexcitation
A. Satou, V. Ryzhii, Y. Kurita +1
We theoretically study the population inversion and negative dynamic conductivity in intrinsic graphene in the terahertz (THz) frequency range upon pulse photoexcitation with near-…
Plasmonic terahertz detection by a double-grating-gate field-effect transistor structure with an asymmetric unit cell
V. V. Popov, D. V. Fateev, T. Otsuji +3
Plasmonic terahertz detection by a double-grating gate field-effect transistor structure with an asymmetric unit cell is studied theoretically. Detection responsivity exceeding 8 k…
Room Temperature Coherent and Voltage Tunable Terahertz Emission from Nanometer-Sized Field Effect Transistors
S. Boubanga-Tombet, F. Teppe, J. Torres +14
We report on reflective electro-optic sampling measurements of TeraHertz emission from nanometer-gate-length InGaAs-based high electron mobility transistors. The room temperature c…
Electrically-induced n-i-p junctions in multiple graphene layer structures
M. Ryzhii, V. Ryzhii, T. Otsuji +2
The Fermi energies of electrons and holes and their densities in different graphene layers (GLs) in the n- and p-regions of the electrically induced n-i-p junctions formed in multi…