most citedA Piezoelectric, Strain-Controlled Antiferromagnetic Memory Insensitive to Magnetic Fields

204 citations · 367 across the 6 of their papers we have counts for

collaborators

6 papers

math.PR2020

Normal Approximation and Fourth Moment Theorems for Monochromatic Triangles

Bhaswar B. Bhattacharya, Xiao Fang, Han Yan

Given a graph sequence denote by the number of monochromatic triangles in a uniformly random coloring of the vertices of with color…

hep-ph20195 cited

Angular distribution of the rare decay

Han Yan

We provide a determination of the complete angular distribution for the four body rare decay , with unpolarized baryons and massive leptons,…

cond-mat.str-el20191 cited

Neutron scattering signatures of a quantum spin ice

Romain Sibille, Nicolas Gauthier, Han Yan +8

Quantum spin ice is an appealing proposal of a quantum spin liquid - systems where the magnetic moments of the constituent electron spins evade classical long-range order to form a…

cond-mat.mtrl-sci201959 cited

Integration of the Noncollinear Antiferromagnetic Metal Mn3Sn onto Ferroelectric Oxides for Electric-Field Control

Xiaoning Wang, Zexin Feng, Peixin Qin +11

Non-collinear antiferromagnetic materials have received dramatically increasing attention in the field of spintronics as their exotic topological features such as the Berry-curvatu…

cond-mat.mes-hall201998 cited

Antiferromagnetic Piezospintronics

Zhiqi Liu, Zexin Feng, Han Yan +6

Antiferromagnets naturally exhibit three obvious advantages over ferromagnets for memory device applications: insensitivity to external magnetic fields, much faster spin dynamics (…

cond-mat.mtrl-sci2019204 cited

A Piezoelectric, Strain-Controlled Antiferromagnetic Memory Insensitive to Magnetic Fields

Han Yan, Zexin Feng, Shunli Shang +17

Spintronic devices based on antiferromagnetic (AFM) materials hold the promise of fast switching speeds and robustness against magnetic fields. Different device concepts have been…