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20132023
most citedImproved Interfacial and Electrical Properties of GaSb Metal Oxide Semiconductor Devices Passivated with Acidic (NH4)2S Solution

11 citations · 21 across the 3 of their papers we have counts for

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cond-mat.mtrl-sci2014

Temperature dependent characteristics of GaSb p-channel MOSFETs with Si-implanted source and drain

Lianfeng Zhao, Zhen Tan, Jing Wang +1

GaSb p-channel MOSFETs with an atomic layer deposited Al2O3 gate dielectric and a self-aligned Si implanted source/drain are demonstrated. Thermal anneal conditions are optimized f…