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20132023
most citedImproved Interfacial and Electrical Properties of GaSb Metal Oxide Semiconductor Devices Passivated with Acidic (NH4)2S Solution

11 citations · 21 across the 3 of their papers we have counts for

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cond-mat.mtrl-sci2013★ 10 cited

Effects of ozone post deposition treatment on interfacial and electrical characteristics of atomic-layer-deposited Al2O3 and HfO2 films on GaSb substrates

Lianfeng Zhao, Zhen Tan, Jing Wang +1

Atomic-layer-deposited Al2O3 and HfO2 films on GaSb substrates were treated by in-situ ozone post deposition treatment (PDT). The effects of ozone PDT on the interfacial and electr…

cond-mat.mtrl-sci2013★ 11 cited

Improved Interfacial and Electrical Properties of GaSb Metal Oxide Semiconductor Devices Passivated with Acidic (NH4)2S Solution

Lianfeng Zhao, Zhen Tan, Jing Wang +1

Surface passivation with acidic (NH4)2S solution is shown to be effective in improving the interfacial and electrical properties of HfO2/GaSb metal oxide semiconductor devices. Com…