3 citations · 3 across the 1 of their papers we have counts for
2 papers
cond-mat.mes-hall2026
Gate-defined quantum dot and charge noise analysis in a Forksheet transistor
Dominic Leclerc, Claude Rohrbacher, Alexis Morel +6
We report the cryogenic characterization of a 14-nm nMOS Forksheet transistor down to 10 mK. We demonstrate that the device retains transistor operation with improved characteristi…
cond-mat.mes-hall2023★ 3 cited
Dual Operation of Gate-All-Around Silicon Nanowires at Cryogenic Temperatures: FET and Quantum Dot
C. Rohrbacher, J. Rivard, R. Ritzenthaler +5
As CMOS structures are envisioned to host silicon spin qubits, and for co-integrating quantum systems with their classical control blocks, the cryogenic behaviour of such structure…