2 papers
physics.app-ph2023
Local laser-induced solid-phase recrystallization of phosphorus-implanted Si/SiGe heterostructures for contacts below 4.2 K
Malte Neul, Isabelle V. Sprave, Laura K. Diebel +6
Si/SiGe heterostructures are of high interest for high mobility transistor and qubit applications, specifically for operations below 4.2 K. In order to optimize parameters such as…
cond-mat.mes-hall2023
Tailoring potentials by simulation-aided design of gate layouts for spin qubit applications
Inga Seidler, Malte Neul, Eugen Kammerloher +9
Gate-layouts of spin qubit devices are commonly adapted from previous successful devices. As qubit numbers and the device complexity increase, modelling new device layouts and opti…