75 citations · 230 across the 8 of their papers we have counts for
4 papers · 1 filter
Ge doping of GaN beyond the Mott transition
A. Ajay, J. Schörmann, M. Jimenez-Rodriguez +9
We present a study of germanium as n-type dopant in wurtzite GaN films grown by plasma-assisted molecular beam epitaxy, reaching carrier concentrations of up to 6.7E20 cm-3 at 300K…
Alloy inhomogeneity and carrier localization in AlGaN sections and AlGaN/AlN nanodisks in nanowires with 240-350 nm emission
C. Himwas, M. den Hertog, Le Si Dang +2
The Al-Ga intermixing at Al(Ga)N/GaN interfaces in nanowires and the chemical inhomogeneity in AlxGa1-xN/AlN nanodisks (NDs) are attributed to the strain relaxation process. This i…
Polarization fields in GaN/AlN nanowire heterostructures studied by Off axis holography
Martien Den Hertog, Rudeesun Songmuang, Eva Monroy
In this work, we present an off-axis holography study of GaN/AlN heterostructured nanowires grown by plasma-assisted molecular-beam epitaxy. We discuss the sample preparation of na…
Environmental sensitivity of n-i-n and undoped single GaN nanowire photodetectors
F. González-Posada, R. Songmuang, M. Den Hertog +1
In this work, we compare the photodetector performance of single defect-free undoped and n-in GaN nanowires (NWs). In vacuum, undoped NWs present a responsivity increment, nonlinea…