Mid-infrared top-gated Ge/Ge${}_{0.82}$Sn${}_{0.18}$ nanowire phototransistors

Lu Luo, Mahmoud RM Atalla, Simone Assali +2

Achieving high crystalline quality Ge${}_{1-x}$Sn${}_x$ semiconductors at Sn content exceeding 10\% is quintessential to implementing the long sought-after silicon-compatible mid-inf…